Method for manufacturing semiconductor device
US9490140B2 · kind B2 · utility
2Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2015 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Aug 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/665
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There are provided methods for manufacturing a semiconductor device including providing a substrate including a metal layer including an oxidized surface layer in a heat treatment chamber, generating hydrogen radicals within the heat treatment chamber and reducing the oxidized surface layer of the metal layer using the hydrogen radicals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.