Reliable interconnect integration scheme
US9490165B2 · kind B2 · utility
4Cited by
1References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2010 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Dec 13, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments relate to a method for forming reliable interconnects by preparing a substrate with a dielectric layer, processing the dielectric layer to serve as an IMD layer, wherein the IMD layer comprises a hybrid IMD layer comprising a plurality of dielectric materials with different k values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.