Photo mask and method of manufacturing thin film transistor using the same
US9490278B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Jun 16, 2015 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Jun 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
According to an exemplary embodiment of the present invention, a photomask includes a transparent substrate and a polarizing pattern. A polarizing pattern is disposed on a transparent substrate. The polarizing pattern polarize light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.