Silicon carbide semiconductor device and manufacturing method of the same
US9490328B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2013 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Jun 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/665
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In order to provide a high-performance and reliable silicon carbide semiconductor device, in a silicon carbide semiconductor device including an n-type SiC epitaxial substrate, a p-type body layer, a p-type body layer potential fixing region and a nitrogen-introduced n-type first source region formed in the p-type body layer, an n-type second source region to which phosphorus which has a solid-solubility limit higher than that of nitrogen and is easily diffused is introduced is formed inside the nitrogen-introduced n-type first source region so as to be separated from both of the p-type body layer and the p-type body layer potential fixing region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.