Thin film transistor, amorphous silicon flat detection substrate and manufacturing method
US9490366B2 · kind B2 · utility
2Cited by
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Key dates
| Filing date | Jun 20, 2013 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Aug 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
Abstract
A thin film transistor, an amorphous silicon flat detection substrate and a manufacturing method are provided. The material for a source electrode and a drain electrode of the thin film transistor is a conductor converted from the material for the amorphous metal oxide active layer by depositing an insulating substance containing hydrogen ions not less than a preset value, which reduces the valence band level difference between the source and the drain electrodes and the active layer, realizes good lattice matching and improves electricity characteristics of the thin film transistor.
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