P-type doping layers for use with light emitting devices
US9490392B2 · kind B2 · utility
1Cited by
97References
29Claims
0Family size
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Key dates
| Filing date | Oct 20, 2015 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Oct 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/813
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting diode (LED) comprises an n-type Group III-V semiconductor layer, an active layer adjacent to the n-type Group III-V semiconductor layer, and a p-type Group III-V semiconductor layer adjacent to the active layer. The active layer includes one or more V-pits. A portion of the p-type Group III-V semiconductor layer is in the V-pits. A p-type dopant injection layer provided during the formation of the p-type Group III-V layer aids in providing a predetermined concentration, distribution and/or uniformity of the p-type dopant in the V-pits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.