Method for producing an optoelectronic semiconductor device, and optoelectronic semiconductor device
US9490397B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2013 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Dec 17, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing an optoelectronic thin-film chip semiconductor device is specified. A conductor structure is applied on a carrier and a multiplicity of optoelectronic semiconductor chips are arranged between the conductor structures. Each of the optoelectronic semiconductor chips includes a layer at a top side. Furthermore, electrical connections between semiconductor chip and the conductor structure are established, for instance using a bonding wire. The semiconductor chips and the conductor structure are surrounded with a molded body. The molded body does not project beyond the optoelectronic semiconductor chips at the top side thereof facing away from the carrier. Moreover, the carrier is removed and the semiconductor chips surrounded by molding are singulated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.