High-power semiconductor module
US9490621B2 · kind B2 · utility
0Cited by
1References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2014 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Jul 11, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-power semiconductor module is disclosed, which can include a high-power semiconductor device mounted on the module and at least two electrical connections. The module can include a short-circuit device mounted on the module. The short-circuit device can generate a persistent electrically conducting path between the two electrical connections upon receiving a trigger signal by electrically destroying a semiconductor of the high-power semiconductor module.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.