High-frequency drain power supply to decrease power dissipation in class-AB power amplifiers
US9490754B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2013 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Sep 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/21112
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present invention relates to the control of power amplifiers in order to enhance the efficiency of the amplifier by tracking the envelope of input signal and applying the same envelope into the drain voltage of a last stage power transistor. This invention can be used in each and every wireless communication transmitter, since there is definitely a power amplifier in the last part of the transmitter before the antenna, and every power amplifier has limited power performance, depending on type of modulation, due to its input-output curve. We are aiming to enhance the power utility of power amplifiers in different applications through introducing a new method and circuit for supplying power into a power amplifier, wherein the power supplied to the drain of the power amplifier is made to follow the envelope of the transmitted RF signal. Embodiments of the invention provide for a drain power supply module to drive the drain of a power amplifier, wherein an array of parallel amplifiers is controlled, depending on the envelope, to switch at different phases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.