Error detection and correction for external DRAM
US9490847B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2012 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Jul 28, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03M13/6566
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
One embodiment of the present invention sets forth a technique for protecting data with an error correction code (ECC). The data is accessed by a processing unit and stored in an external memory, such as dynamic random access memory (DRAM). Application data and related ECC data are advantageously stored in a common page within a common DRAM device. Application data and ECC data are transmitted between the processor and the external common DRAM device over a common set of input/output (I/O) pins. Eliminating I/O pins and DRAM devices conventionally associated with transmitting and storing ECC data advantageously reduces system complexity and cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.