Photodetector comprising a pinned photodiode that is formed by an optically sensitive layer and a silicon diode
US9491388B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2014 |
| Grant date | Nov 8, 2016 |
| Priority date | — |
| Expiry date | Dec 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8053
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.