Chalcogenide glass-ceramics with photoelectric properties and method for the manufacture thereof
US9492815B2 · kind B2 · utility
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Key dates
| Filing date | Jun 19, 2013 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Jun 19, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2204/00
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Chalcogenide glass-ceramic having, for example, the following composition GeSe2—Sb2Se3—CuI, this glass-ceramic comprising at least one crystalline phase, characterised in that the crystallisation rate and the dimensions of the crystals in the crystalline phase are such that the crystals are substantially in contact with each other in such a way that this crystalline phase has an electrical conductivity greater than or equal to 10−4 s·cm−1 which increases under lighting due to the creation of charge carriers within the crystalline phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.