Low internal stress copper electroplating method
US9493886B2 · kind B2 · utility
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6Claims
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Key dates
| Filing date | Sep 9, 2012 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Jun 28, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D3/38
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Copper electroplating methods provide low internal stress copper deposits. Concentrations of accelerators in the copper electroplating bath vary as a function of the plating current density and the low internal stress copper deposit is observed as a matt copper deposit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.