Heterogeneous single vanadate based crystals for Q-switched lasers and microlasers and method for forming same
US9493887B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2014 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Jul 16, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/30
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed are heterogeneous crystals for use in a laser cavity and methods of forming the crystals. A crystal can be a monolithic crystal containing a vanadate-based activator region and a vanadate-based Q-switch. Disclosed methods include hydrothermal growth techniques for the growth of differing layers on a host. A YVO4 host material can be doped in one region with a suitable active lasing ion and can be formed with another region that is doped with a saturable absorber. Regions can be formed with controlled thickness. Following formation, a heterogeneous crystal can be cut, polished and coated with mirror films at each end for use in a laser cavity to provide short pulses of high power emissions using high frequency pulse modes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.