Method for the crystallogenesis of a material electrically conducting in the molten state
US9493889B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 27, 2009 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Mar 2, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1092
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The disclosure relates to a method for the crystallogenesis of a material that is electrically conducting at the molten state, by drawing from a molten mass of the material in a crucible, that comprises: progressively subjecting the molten material to a decreasing temperature so that a liquid-solid interface is formed; controlling the flatness of the liquid-solid interface of the material; subjecting the molten material, before and during solidification, to an electromagnetic kneading; the method including that the electromagnetic kneading is obtained by applying an alternating magnetic field. The disclosure also relates to a device for implementing the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.