Method for forming silicon oxide and metal nanopattern's, and magnetic recording medium for information storage using the same
US9495991B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 9, 2013 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Sep 9, 2033 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08F2438/03
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method for forming a silicon oxide nanopattern, in which the method can be used to easily form a nanodot or nanohole-type nanopattern, and a metal nanopattern formed by using the same can be properly applied to a next-generation magnetic recording medium for storage information, etc., a method for forming a metal nanopattern, and a magnetic recording medium for information storage using the same.The method for forming a silicon oxide nanopattern includes the steps of forming a block copolymer thin film including specific hard segments and soft segments containing a (meth)acrylate-based repeating unit on silicon oxide of a substrate; conducting orientation of the thin film; selectively removing the soft segments from the block copolymer thin film; and conducting reactive ion etching of silicon oxide using the block copolymer thin film from which the soft segments are removed, as a mask to form a silicon oxide nanodot or nanohole pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.