Device including quantum dots
US9496141B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 2012 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | May 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a device comprises forming a layer comprising quantum dots over a substrate including a first electrode, fixing the layer comprising quantum dots formed over the substrate, and exposing at least a portion of, and preferably all, exposed surfaces of the fixed layer comprising quantum dots to small molecules. Also disclosed is a method of making a device, the method comprising forming a layer comprising quantum dots over a substrate including a first electrode, exposing the layer comprising quantum dots to small molecules and light flux. A method of making a film including a layer comprising quantum dots, and a method of preparing a device component including a layer comprising quantum dots are also disclosed. Devices, device components, and films are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.