Patent · US Active

Device including quantum dots

US9496141B2 · kind B2 · utility

8Cited by
13References
30Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 10, 2012
Grant dateNov 15, 2016
Priority date
Expiry dateMay 10, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/832
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method of making a device comprises forming a layer comprising quantum dots over a substrate including a first electrode, fixing the layer comprising quantum dots formed over the substrate, and exposing at least a portion of, and preferably all, exposed surfaces of the fixed layer comprising quantum dots to small molecules. Also disclosed is a method of making a device, the method comprising forming a layer comprising quantum dots over a substrate including a first electrode, exposing the layer comprising quantum dots to small molecules and light flux. A method of making a film including a layer comprising quantum dots, and a method of preparing a device component including a layer comprising quantum dots are also disclosed. Devices, device components, and films are also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.