Semiconductor device and method of manufacturing semiconductor device
US9496201B2 · kind B2 · utility
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1References
3Claims
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Assignee
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Key dates
| Filing date | May 27, 2016 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | May 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes a first conductor, a second conductor, and an envelope. The first conductor includes a first radiation surface. The second conductor includes a second radiation surface. The envelope includes a first envelope portion which is composed of a first insulative material and is formed such that the first envelope portion seals a semiconductor, and a second envelope portion which is composed of a second insulative material and is formed in contact with the first radiation surface and the second radiation surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.