Photodiode array module and method for manufacturing same
US9496298B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2012 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Mar 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/12
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A first semiconductor substrate 1 and a second semiconductor substrate 2 are different in material, and therefore have sensitivities to incident light of mutually different wavelength bands. Respective photodiodes of photodiode arrays are connected to amplifiers of the first semiconductor substrate 1. According to this method, the second semiconductor substrate 2 is separated from the wafer by etching the second semiconductor substrate 2 and then dicing a deepest portion of the etched groove. The density of crystal defects in a side surface produced by etching is smaller than the density of crystal defects in a side surface produced by dicing. Because a photodiode located in an end portion of the second semiconductor substrate 2 does not need to be removed, a reduction in the number of photodiodes can be suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.