Photodetector, method of manufacturing photodetector, radiation detector, and radiation detection apparatus
US9496310B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2015 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Oct 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A photodetector according to an embodiment includes: a semiconductor substrate with a first and second faces; a groove formed on the second face; pixels disposed to the semiconductor substrate, each pixel including: light detection cells disposed on the first face, each light detection cell having a first and second terminals, each light detection cell being surrounded by the groove; a first wiring line disposed on the first face to connect to the first terminal of each of the detection cells; a first opening formed in the second face and penetrating the semiconductor substrate; a first insulating film covering the second face, a side face of the first opening, and a side face and a bottom of the groove; a second opening formed in the first insulating film; a first and second electrodes disposed in the first and second openings respectively; and a light blocking material filled to the groove.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.