Top-gate bottom-contact organic transistor
US9496315B2 · kind B2 · utility
1Cited by
10References
20Claims
0Family size
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Key dates
| Filing date | Aug 19, 2010 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Mar 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/311
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Top-gate, bottom-contact organic thin film transistors are provided. The transistors may include metal bilayer electrodes to aid in charge movement within the device. In an embodiment, an organic transistor includes a drain electrode and a source electrode disposed over a first region of a substrate, a transition metal oxide layer disposed over and in direct physical contact with the drain electrode and the source electrode, an organic preferentially hole conducting channel layer disposed over the metal oxide and between the drain electrode and the source electrode, and a gate electrode disposed over the channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.