Methods of manufacturing capacitors for semiconductor devices
US9496328B2 · kind B2 · utility
4Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Apr 9, 2015 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Apr 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing a capacitor for a semiconductor device includes forming a lower electrode, forming a dielectric layer on the lower electrode, forming a first upper electrode on the dielectric layer, adsorbing an organic silicon source onto a surface of the first upper electrode, and forming a second upper electrode on the first upper electrode onto which the organic silicon source is adsorbed. Related devices and fabrication methods are also discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.