Method for manufacturing thin-film transistor substrate
US9496374B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2014 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Feb 11, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
The present invention provides a method for manufacturing a thin-film transistor substrate, which has a simple process and achieves an excellent contact interface between an oxide semiconductor layer and source/drain terminals through successive film forming so as to prevent crowding effect resulting from excessive contact resistance. Further, by using a metallic material containing tantalum to make the source/drain terminals and applying an etchant solution containing hydrogen peroxide to carry out etching in an etching process of the source/drain terminals, damages of the oxide semiconductor layer caused by traditional etchant solution can be prevented and quality of the thin-film transistor substrate can be enhanced. Further, it is not necessary to additionally form an etch stopper layer to protect the oxide semiconductor layer in the back channel so as to achieve relatively high channel width/length ratio (W/L), and also simplify the structure of the thin-film transistor substrate, simplify the manufacturing process, reduce the manufacturing cost, and enhance yield rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.