Semiconductor device and method of fabricating the same
US9496381B2 · kind B2 · utility
6Cited by
16References
26Claims
0Family size
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Key dates
| Filing date | Dec 17, 2012 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Dec 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
Abstract
A semiconductor device may include a substrate including an active pattern delimited by a device isolation pattern, a gate electrode crossing the active pattern, a first impurity region and a second impurity region in the active pattern on both sides of the gate electrode, a bit line crossing the gate electrode, a first contact electrically connecting the first impurity region with the bit line, and a first nitride pattern on a lower side surface of the first contact. A width of the first contact measured perpendicular to an extending direction of the bit line may be substantially equal to that of the bit line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.