Termination region of a semiconductor device
US9496391B2 · kind B2 · utility
2Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2014 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Jul 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/514
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one general aspect, an apparatus can include a semiconductor region, and a trench defined within the semiconductor region. The trench can have a depth aligned along a vertical axis and have a length aligned along a longitudinal axis orthogonal to the vertical axis. The trench can have a first portion of the length included in a termination region of the semiconductor region and can have a second portion of the length included in an active region of the semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.