Manufacturing method of semiconductor device
US9496411B2 · kind B2 · utility
10Cited by
30References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 2015 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | May 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/70
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes the steps of forming a first insulating film over a first gate electrode over a substrate while heated at a temperature higher than or equal to 450° C. and lower than the strain point of the substrate, forming a first oxide semiconductor film over the first insulating film, adding oxygen to the first oxide semiconductor film and then forming a second oxide semiconductor film over the first oxide semiconductor film, and performing heat treatment so that part of oxygen contained in the first oxide semiconductor film is transferred to the second oxide semiconductor film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.