Method for forming patterns of differently doped regions
US9496430B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2014 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Feb 4, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosed technology generally relates to forming patterns of doped semiconductor regions, and more particularly to methods of forming such patterns in fabricating photovoltaic devices. In one aspect, a method of forming a pattern of different doped regions at the same side of a semiconductor substrate comprises providing a patterned doped layer on a surface of the semiconductor substrate at predetermined locations where at least one first doped region is to be formed. The method additionally includes selectively growing at least one second doped region epitaxially at the same side of the semiconductor substrate using the patterned doped layer as an epitaxial growth mask. Furthermore, selectively growing comprises driving dopants from the patterned doped layer into the semiconductor substrate to form the first doped region at the predetermined locations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.