Method for manufacturing CI(G)S-based thin film comprising Cu-Se thin film using Cu-Se two-component nanoparticle flux, and CI(G)S-based thin film manufactured by the method
US9496449B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2012 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Jun 7, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/541
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a CI(G)S-based thin film using a Cu—Se two-component nanoparticle flux, and a CI(G)S-based thin film manufactured by the method are provided. The method for manufacturing the CI(G)S-based thin film, according to the present invention, comprises the steps of: manufacturing Cu—Se two-component nanoparticles and In nanoparticles; manufacturing a slurry comprising the Cu—Se two-component nanoparticles by mixing the Cu—Se two-component nanoparticles, a solvent, and a binder, and manufacturing a slurry comprising the In nanoparticles by mixing the In nanoparticles, a solvent, and a binder; forming a thin film in which a plurality of layers are laminated by alternately coating the slurry comprising the Cu—Se two-component nanoparticles and the slurry comprising the In nanoparticles on a substrate, regardless of order; and heat-processing the thin film which is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.