Semiconductor light emitting device
US9496471B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2015 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Aug 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8506
Abstract
A semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.