Resistive random access memory and method for producing same
US9496493B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2014 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Dec 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A resistive random access memory includes two electrode layers and a resistive switching layer mounted between the two electrode layers. The resistive switching layer consists essentially of insulating material with oxygen, metal material, and mobile ions. The polarity of the mobile ions is opposite to the polarity of oxygen ions. A method for producing a resistive random access memory includes preparing a first metal layer and sputtering a resistive switching layer on the first metal layer. Surface treatment is conducted on the resistive switching layer by using a plasma containing mobile ions to dope the mobile ions into the resistive switching layer. The polarity of the mobile ions is opposite to the polarity of oxygen ions. Then, a second metal layer is sputtered on the resistive switching layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.