Organic light-emitting diode with doped layers

US9496499B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Salvatore Cina · Grenoble, FR
• Henri Doyeux · Beaucroissant, FR
• David Vaufrey · Grenoble, FR
• Armand Bettinelli · Voiron, FR

Key dates

• Filing date: Feb 21, 2006
• Grant date: Nov 15, 2016
• Expiry date: Feb 25, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K71/40

Abstract

The invention concerns an organic light-emitting diode comprising a lower electrode (2) and an upper electrode (8), an electroluminescent organic layer (5), and at least one doped organic layer (3; 7) in contact with one of said electrodes. The invention is characterized in that the doping is carried out using an alkaline-earth element or lanthanide, and the diode is heat-treated at temperature preferably not less than 60° C. for more than one hour. The invention enables the lighting performance of the diode to be considerably improved.