Semiconductor laser device and manufacturing method thereof, and submount manufacturing method
US9496680B2 · kind B2 · utility
3Cited by
6References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2016 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Mar 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32341
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device can include an insulating single crystal SiC having a first surface, a second surface, and micropipes having openings in the first surface and the second surface. A conductive base can be provided on a side of the first surface of the single crystal SiC, and a semiconductor laser element can be provided on a side of the second surface of the single crystal SiC. An insulating member can be formed in the micropipes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.