Patent · US Active

Two terminal drive of bipolar junction transistor (BJT) of a light emitting diode (LED)-based bulb

US9496855B2 · kind B2 · utility

3Cited by
117References
28Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 28, 2014
Grant dateNov 15, 2016
Priority date
Expiry dateAug 28, 2034

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02B20/30
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A bipolar junction transistor (BJT) may be used in a power stage DC-to-DC converter, such as for LED-based light bulbs. The BJT may be switched on and off from a controller coupled to two terminals of the BJT. Through the two terminals, the control IC may dynamically adjust a reverse recovery time period of the BJT. The reverse recovery time period may be adjusted by changing an amount of base charge that accumulates on the BJT. Additional, the reverse recovery may be controlled through the use of a reverse base current source applied to the BJT after beginning switching off the BJT.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.