Active isolation switch
US9496865B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2015 |
| Grant date | Nov 15, 2016 |
| Priority date | — |
| Expiry date | Nov 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0054
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An active isolation switch according to this invention includes a field effect transistor (FET), a first bi-polar transistor and a second bi-polar transistor, and an emitter bias resistor. The FET is formed with a source, a gate, and a drain. The first bi-polar transistor is formed with a first emitter, a first base, and a first collector; the first emitter is connected to the source and the first collector is connected to the gate. The second bi-polar transistor is formed with a second emitter, a second base, and a second collector, the second base is connected to the first base, and the second collector is connected to the drain. The emitter bias resistor is formed with a first terminal and a second terminal; the first terminal is connected to the emitter of the second bi-polar transistor and the second terminal is connected to the emitter of the first bi-polar transistor.The first resistor is connected between a bias voltage and the first collector; the second resistor is connected between the bias voltage and the base of the second bi-polar transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.