Implant with high vapor pressure medium
US9498195B2 · kind B2 · utility
22Cited by
104References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2013 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Nov 25, 2033 |
Classification
- Technology area (CPC A)Human Necessities
- CPC primaryA61M2210/1085
- WIPO fieldMedical technology
- WIPO sectorInstruments
Abstract
An implant for use in a human or animal body can include a flexible housing with an outer wall and having a chamber therein. The implant can have at least one high vapor pressure medium within the chamber. The at least one high vapor pressure medium can have a combined vapor pressure equal to or greater than about the average value of the hydrostatic pressure of the implantation site plus the skin tension of the housing minus the gas tension of the dissolved gasses present at the implantation site.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.