Magnetoresistance element including a stack having a sidewall, and an insulating layer in contact with the sidewall
US9502056B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2016 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Mar 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A TMR element includes a stack having a sidewall, and an insulating layer in contact with the sidewall. The stack includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer located between the first and second ferromagnetic layers. The insulating layer includes an island-like structure section in contact with only a part of the sidewall, and a coating section covering the island-like structure section and the sidewall. The tunnel barrier layer contains a first oxide. The island-like structure section contains a second oxide. Each of the first and second oxides is a metal oxide or semiconductor oxide. G2−G1 is 435 kJ/mol or smaller, where G1 and G2 are standard Gibbs energies of formation at 280° C. of the first oxide and the second oxide, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.