Multi level antifuse memory device and method of operating the same
US9502132B2 · kind B2 · utility
2Cited by
5References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2013 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Mar 7, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/563
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An antifuse memory device includes an antifuse memory cell, a reference current generation unit, and a comparison unit. The antifuse memory cell includes an antifuse. The reference current generation unit provides a reference current selected from a plurality of reference currents. The comparison unit compares an intensity of a cell current flowing through the antifuse with an intensity of the reference current and provides an output signal corresponding to a result of the comparison.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.