Interleaved T-coil structure and a method of manufacturing the T-coil structure
US9502168B1 · kind B1 · utility
11Cited by
12References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2013 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Feb 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/66
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, an integrated circuit is described. The integrated circuit includes a substrate, a dielectric stack, a first inductor and a second inductor. The dielectric stack may be formed above the substrate and includes first and second layers. The first inductor may be formed in both the first and second layers. The second inductor may also be formed in the first and second layers with a substantial portion of the first inductor structure overlaps with the second inductor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.