Preparation method of crystalline silicon film based on layer transfer

US9502240B2 · kind B2 · utility

Assignee

• SHANGHAI ADVANCED RESEARCH INSTITUTE, CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Dongfang Liu · Westborough, US
• Wei Zhang · Nanjing, CN
• Xiaoyuan Chen · Acton, US
• Hui Yang · Singapore, SG
• Cong Wang · Tangxia, CN
• Linfeng LU · Shanghai, CN

Key dates

• Filing date: May 7, 2014
• Grant date: Nov 22, 2016
• Expiry date: May 7, 2034

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Provided is a preparation method of a crystalline silicon film. The method includes: 1) forming a mask for making a periodic silicon rod array on a monocrystalline silicon wafer substrate, and forming the periodic silicon rod array on the monocrystalline silicon substrate by a wet chemical etching or dry etching process; 2) forming barrier layers both on the surface of the monocrystalline silicon substrate and the surface of the silicon rod array for next selectively epitaxial growth of silicon; 3) exposing silicon cores on the heads of the rod array by a selective etching process to form a protruded silicon seeds out of the mother wafer substrate; 4) growing a continuous silicon film at the top of the rod array by a selective epitaxial chemical vapor deposition method using the exposed silicon cores as protruded seeds while leaving voids between the film and the mother wafer substrate; and 5) lifting off the silicon film and transferring the silicon film to a preset substrate, and the seeded substrate is reusable.