Semiconductor device and electronic device
US9502434B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2015 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Apr 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13091
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The electric characteristics of a semiconductor device using an oxide semiconductor are improved. The reliability of a semiconductor device using an oxide semiconductor is improved. The semiconductor device includes an element layer. The element layer includes a first film, a transistor, and a second film. The first film and the second film are partly in contact with each other. The region in which the first film and the second film are in contact with each other has a closed-loop shape when seen from above. The transistor is located between the first film and the second film. The region in which the first film and the second film are in contact with each other is located between a side surface of the element layer and the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.