Thin film transistor, array substrate and method for fabricating the same, and display device
US9502436B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 16, 2014 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Apr 16, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/13629
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor, an array substrate and a method for fabricating the array substrate, and a display device are disclosed. The thin film transistor comprises a gate electrode, a gate insulation layer, a semiconductor active layer, a source electrode, a drain electrode and a protection layer provided on a base substrate, and comprises: a first transparent electrode provided between the source electrode and the semiconductor active layer, corresponding to the source electrode and in direct contact with the source electrode; a second transparent electrode provided between the drain electrode and the semiconductor active layer, corresponding to the drain electrode and in direct contact with the drain electrode, the first transparent electrode is in contact with the semiconductor active layer through a first via provided in the protection layer, the second transparent electrode is in contact with the semiconductor active layer through a second via provided in the protection layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.