Silicon carbide semiconductor device
US9502552B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2015 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Jul 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a silicon carbide semiconductor device having an improved switching characteristic. A MOSFET includes a silicon carbide layer, a gate insulating film, a gate electrode, and a source electrode. The silicon carbide layer includes a drift region, a body region, and a contact region. The source electrode is in contact with the contact region in a main surface. The MOSFET is configured such that contact resistance of the source electrode with respect to the contact region is not less than 1×10−4 Ωcm2 and not more than 1×10−1 Ωcm2. Moreover, when viewed in a plan view of the main surface, an area of the contact region is not less than 10% of an area of the body region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.