Backside coupled symmetric varactor structure
US9502586B1 · kind B1 · utility
9Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2015 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Sep 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A symmetric varactor structure may include a first varactor component. The first varactor component may include a gate operating as a second plate, a gate oxide layer operating as a dielectric layer and a body operating as a first plate of an area modulating capacitor. In addition, doped regions may surround the body of the first varactor component. The first varactor component may be supported on a backside by an isolation layer. The symmetric varactor structure may also include a second varactor component electrically coupled to the backside of the first varactor component through a backside conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.