Structure of high electron mobility light emitting transistor
US9502602B2 · kind B2 · utility
1Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2014 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Dec 31, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
A structure of high electron mobility light emitting transistor comprises a substrate, a HEMT region disposed on the substrate, and a gallium nitride LED (GaN-LED) region disposed on the substrate. A two-dimensional electron gas layer is present in each of the HEMI region and the LED region, and the HEMT region is coupled to the LED region through the two-dimensional electron gas layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.