Method for producing an active zone for an optoelectronic semiconductor chip and optoelectronic semiconductor chip

US9502607B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Joachim Hertkorn · Neukirchen, DE
• Thomas Lehnhardt · Regensburg, DE
• Marcus Eichfelder · Regensburg, DE
• Jan-Philipp Ahl · Regensburg, DE

Key dates

• Filing date: May 3, 2013
• Grant date: Nov 22, 2016
• Expiry date: Jun 13, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

In at least one embodiment, the method is designed to produce an active zone for an optoelectronic semiconductor chip and comprises the following steps: growing a fourth barrier layer (24) based on Alx4Iny4Ga1−x4−y4N where 0≦x4≦0.40 and on average 0<y4≦0.4, wherein the In content increases along a growth direction (z), growing a quantum well layer (20) on the fourth barrier layer (24), wherein the quantum well layer (20) is based on InyGa1−yN where 0.08≦y≦0.35, growing a first barrier layer (21) based on Alx1Iny1Ga1−x1−y1N where 0≦x1≦0.40 and on average 0<y1≦0.4 onto the quantum well layer (20), wherein the In content decreases along the growth direction (z), growing a second barrier layer (22) based on GaN onto the first barrier layer (21), and growing a third barrier layer (23) based on GaN onto the second barrier layer (22), wherein the third barrier layer (23) is grown with the addition of H2 gas.