Surface-emitting semiconductor laser, surface-emitting semiconductor laser device, optical transmission device, and information processing device
US9502863B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2015 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Jul 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3432
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a surface-emitting semiconductor laser including a substrate; a first semiconductor multilayer reflector of a first conductivity type formed on the substrate, the first semiconductor multilayer reflector including plural pairs of a low-refractive-index layer and a high-refractive-index layer; a cavity region formed on the first semiconductor multilayer reflector; a second semiconductor multilayer reflector of a second conductivity type formed on the cavity region, the second semiconductor multilayer reflector including plural pairs of a low-refractive-index layer and a high-refractive-index layer; a columnar structure extending from the second semiconductor multilayer reflector to the cavity region; and a current confinement layer formed inside the columnar structure by selective oxidation of a semiconductor layer containing Al. The cavity region includes an active region; and a cavity extension region interposed between the active region and the first semiconductor multilayer reflector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.