Acoustic wave element and acoustic wave device using same
US9503049B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2011 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Sep 9, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/6406
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A SAW element has a substrate; an IDT electrode located on an upper surface of the substrate and comprises Al or an alloy containing Al; a first film located on an upper surface of the IDT electrode; and a protective layer which covers the IDT electrode provided with the first film and the portion of the substrate exposed from the IDT electrode, which has a thickness from the upper surface of the substrate larger than a total thickness of the IDT electrode and first film, and which contains a silicon oxide. The first film contains a material which has a larger acoustic impedance than the material (Al or the alloy containing Al) of the IDT electrode and the silicon oxide and which has a slower propagation velocity of an acoustic wave than the material of the IDT electrode and the silicon oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.