Exclusive-OR gate using magneto-electric tunnel junctions
US9503085B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 30, 2015 |
| Grant date | Nov 22, 2016 |
| Priority date | — |
| Expiry date | Sep 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A magneto-electric (ME) magnetic tunnel junction (MTJ) Exclusive-OR (XOR) gate is provided. The ME MTJ XOR gate includes an insulator separating a top ferromagnetic (FM) layer and a bottom FM layer, a top ME layer on the top FM layer, and a bottom ME layer on the bottom FM layer. The ME MTJ XOR gate also includes a top electrode coupled to the top ME layer and a bottom electrode coupled to the bottom ME layer where a voltage between the top electrode and the top FM layer is a first input, a voltage between the bottom electrode and the bottom FM layer is a second input, and a resistance between the top FM layer and the bottom FM layer is indicative of the XOR of the first input and the second input. The ME MTJ XOR has reduced energy consumption, smaller area, faster switching times, and is non-volatile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.