Ultrasonic transducers in complementary metal oxide semiconductor (CMOS) wafers and related apparatus and methods
US9505030B2 · kind B2 · utility
51Cited by
85References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 17, 2015 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Apr 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/16225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.