Device, system and method for providing MEMS structures of a semiconductor package

US9505610B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Weng Hong Teh · Phoenix, US
• Tarek A. Ibrahim · Mesa, US
• Sarah Haney · San Jose, US
• Daniel N. Sobieski · Phoenix, US
• Parshuram Balkrishna Zantye · Morganville, US
• Chad Eric Mair · Chandler, US
• Telesphor Kamgaing · Chandler, US

Key dates

• Filing date: Sep 25, 2013
• Grant date: Nov 29, 2016
• Expiry date: Sep 25, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/01079
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Techniques and mechanisms for providing precisely fabricated structures of a semiconductor package. In an embodiment, a build-up carrier of the semiconductor package includes a layer of porous dielectric material. Seed copper and plated copper is disposed on the layer of porous dielectric material. Subsequent etching is performed to remove copper adjacent to the layer of porous dielectric material, forming a gap separating a suspended portion of a MEMS structure from the layer of porous dielectric material. In another embodiment, the semiconductor package includes a copper structure disposed between portions of an insulating layer or portions of a layer of silicon nitride material. The layer of silicon nitride material couples the insulating layer to another insulating layer. One or both of the insulating layers are each protected from desmear processing with a respective release layer structure.